IPB65R125C7ATMA1

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Infineon Technologies

MOSFET N-CH 650V 18A D2PAK

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IPB65R125C7ATMA1

Unknown

Infineon Technologies

MOSFET N-CH 650V 18A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPB65R125C7ATMA1

Current - Continuous Drain (Id) @ 25°C	18 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1670 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	101 W
Rds On (Max) @ Id, Vgs	125 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPB65R Series

Part	Technology	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Rds On (Max) @ Id, Vgs	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [x]
Infineon Technologies IPB65R095C7ATMA1	MOSFET (Metal Oxide)	128 W	650 V	24 A	N-Channel	20 V	-55 °C	150 °C	45 nC	10 V	4 V	2140 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	95 mOhm	Surface Mount
Infineon Technologies IPB65R125C7ATMA1	MOSFET (Metal Oxide)	101 W	650 V	18 A	N-Channel	20 V	-55 °C	150 °C	35 nC	10 V	4 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	125 mOhm	Surface Mount	1670 pF
Infineon Technologies IPB65R660CFDATMA1	MOSFET (Metal Oxide)	62.5 W	650 V	6 A	N-Channel	20 V	-55 °C	150 °C	22 nC	10 V	4.5 V	615 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	660 mOhm	Surface Mount
Infineon Technologies IPB65R190C7ATMA1	MOSFET (Metal Oxide)	72 W	650 V	13 A	N-Channel	20 V	-55 °C	150 °C		10 V	4 V	1150 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	190 mOhm	Surface Mount		23 nC
Infineon Technologies IPB65R280E6ATMA1	MOSFET (Metal Oxide)		650 V	13.8 A	N-Channel	20 V	-55 °C	150 °C	45 nC	10 V	3.5 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	280 mOhm	Surface Mount	950 pF		104 W
Infineon Technologies IPB65R225C7ATMA1	MOSFET (Metal Oxide)		650 V	11 A	N-Channel	20 V	-55 °C	150 °C		10 V	4 V		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	225 mOhm	Surface Mount	996 pF		63 W	20 nC
Infineon Technologies IPB65R600C6ATMA1	MOSFET (Metal Oxide)		650 V	7.3 A	N-Channel	20 V	-55 °C	150 °C		10 V	3.5 V	440 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	600 mOhm	Surface Mount		23 nC	63 W
Infineon Technologies IPB65R090CFD7ATMA1	MOSFET (Metal Oxide)		650 V	25 A	N-Channel	20 V	-55 °C	150 °C		10 V	4.5 V	2513 pF	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	90 mOhm	Surface Mount		53 nC	127 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

IPB65R Series

N-Channel 650 V 18A (Ta) 101W (Tc) Surface Mount PG-TO263-3

Documents

Technical documentation and resources