BFP720FESDH6327XTSA1

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Infineon Technologies

RF TRANS NPN 4.7V 45GHZ 4TSFP

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Infineon Technologies

RF TRANS NPN 4.7V 45GHZ 4TSFP

Technical Specifications

Parameters and characteristics for this part

Specification	BFP720FESDH6327XTSA1

Current - Collector (Ic) (Max) [Max]	30 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Frequency - Transition	45 GHz
Gain [Max]	29 dB
Gain [Min]	10 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	1.3 dB
Noise Figure (dB Typ @ f) [Min]	0.5 dB
Operating Temperature	150 °C
Package / Case	4-SMD, Flat Leads
Power - Max [Max]	100 mW
Supplier Device Package	4-TSFP
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	4.7 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	Transistor Type	Operating Temperature	Package / Case	Frequency - Transition	Gain [Max]	Gain [Min]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Infineon Technologies BFP720FESDH6327XTSA1	4.7 V	0.5 dB	1.3 dB	Surface Mount	100 mW	4-TSFP	NPN	150 °C	4-SMD Flat Leads	45 GHz	29 dB	10 dB	30 mA	160 hFE
Infineon Technologies BFP720H6327XTSA1	4.7 V	0.4 dB	0.95 dB	Surface Mount	100 mW	PG-SOT343-4-2	NPN	150 °C	SC-82A SOT-343	45 GHz	28.5 dB	10.5 dB	25 mA	160 hFE

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

The BFP720FESD is Silicon Germanium Carbon (SiGe:C) NPN heterojunction wideband bipolar RF Transistor (HBT) with an integrated ESD protection

Technical documentation and resources