BFP720H6327XTSA1

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Infineon Technologies

TRANSISTOR, RF, AEC-Q101, NPN, SOT-343

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Infineon Technologies

TRANSISTOR, RF, AEC-Q101, NPN, SOT-343

Technical Specifications

Parameters and characteristics for this part

Specification	BFP720H6327XTSA1

Current - Collector (Ic) (Max) [Max]	25 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160 hFE
Frequency - Transition	45 GHz
Gain [Max]	28.5 dB
Gain [Min]	10.5 dB
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f) [Max]	0.95 dB
Noise Figure (dB Typ @ f) [Min]	0.4 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Power - Max [Max]	100 mW
Supplier Device Package	PG-SOT343-4-2
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max) [Max]	4.7 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Noise Figure (dB Typ @ f) [Min]	Noise Figure (dB Typ @ f) [Max]	Mounting Type	Power - Max [Max]	Supplier Device Package	Transistor Type	Operating Temperature	Package / Case	Frequency - Transition	Gain [Max]	Gain [Min]	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]
Infineon Technologies BFP720FESDH6327XTSA1	4.7 V	0.5 dB	1.3 dB	Surface Mount	100 mW	4-TSFP	NPN	150 °C	4-SMD Flat Leads	45 GHz	29 dB	10 dB	30 mA	160 hFE
Infineon Technologies BFP720H6327XTSA1	4.7 V	0.4 dB	0.95 dB	Surface Mount	100 mW	PG-SOT343-4-2	NPN	150 °C	SC-82A SOT-343	45 GHz	28.5 dB	10.5 dB	25 mA	160 hFE

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General part information

The BFP720 is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor (HBT).

Technical documentation and resources