
DMTH4002SCTB-13
ActiveDiodes Inc
TRANSISTOR ENHANCEMENT MOSFET N-CH 40V 192A 3-PIN TO-263AB T/R
Deep-Dive with AI
Search across all available documentation for this part.

DMTH4002SCTB-13
ActiveDiodes Inc
TRANSISTOR ENHANCEMENT MOSFET N-CH 40V 192A 3-PIN TO-263AB T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMTH4002SCTB-13 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 192 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 77.5 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 7180 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 6 W, 166.7 W |
| Rds On (Max) @ Id, Vgs | 3 mOhm |
| Supplier Device Package | TO-263AB (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tape & Reel (TR) | 800 | $ 0.74 | |
| 1600 | $ 0.69 | |||
| 2400 | $ 0.66 | |||
| 4000 | $ 0.64 | |||
Description
General part information
DMTH4002SCTB Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources