DMTH4002SCTB Series

40V +175°C N-Channel Enhancement Mode MOSFET

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Part	Package / Case	Rds On (Max) @ Id, Vgs	FET Type	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)
Diodes Inc DMTH4002SCTB-13	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	3 mOhm	N-Channel	MOSFET (Metal Oxide)	-55 °C	175 ░C	TO-263AB (D2PAK)	Surface Mount	192 A	6 W 166.7 W	40 V	4 V	7180 pF	77.5 nC	20 V	10 V

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Low RDS(ON) – Minimizes Power Losses

• Low Qg – Minimizes Switching Losses

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. A listing can be found athttps://www.diodes.com/products/automotive/automotiveproducts/.

• This part is qualified to JEDEC standards (as references in AEC-Q) for High Reliability.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.