Zenode.ai Logo
Beta
K
DMT6010LPS-13 - DMPH4015SPSQ-13

DMT6010LPS-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Search across all available documentation for this part.

DMT6010LPS-13 - DMPH4015SPSQ-13

DMT6010LPS-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT6010LPS-13
Current - Continuous Drain (Id) @ 25°C13.5 A, 80 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41.3 nC
Input Capacitance (Ciss) (Max) @ Vds2090 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)113 W
Power Dissipation (Max)2.2 W
Rds On (Max) @ Id, Vgs8 mOhm
Supplier Device PackagePowerDI5060-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.95
10$ 0.78
100$ 0.61
500$ 0.51
1000$ 0.42
Digi-Reel® 1$ 0.95
10$ 0.78
100$ 0.61
500$ 0.51
1000$ 0.42
Tape & Reel (TR) 2500$ 0.37

Description

General part information

DMT6010LPS Series

This new generation n-channel enhancement mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and Load switches.