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DMT6010LFG-13 - 8PowerVDFN

DMT6010LFG-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

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DMT6010LFG-13 - 8PowerVDFN

DMT6010LFG-13

Active
Diodes Inc

60V N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMT6010LFG-13
Current - Continuous Drain (Id) @ 25°C13 A, 30 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs41.3 nC
Input Capacitance (Ciss) (Max) @ Vds2090 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2.2 W, 41 W
Rds On (Max) @ Id, Vgs7.5 mOhm
Supplier Device PackagePOWERDI3333-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.93
10$ 0.63
100$ 0.43
500$ 0.36
1000$ 0.33
Digi-Reel® 1$ 0.93
10$ 0.63
100$ 0.43
500$ 0.36
1000$ 0.33
Tape & Reel (TR) 3000$ 0.30
6000$ 0.28
9000$ 0.26
15000$ 0.26

Description

General part information

DMT6010LPS Series

This new generation n-channel enhancement mode MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in notebook battery power managements and Load switches.