IRLU3636PBF
ActiveInfineon Technologies
IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;
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IRLU3636PBF
ActiveInfineon Technologies
IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IRLU3636PBF |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 50 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 49 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 3779 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 143 W |
| Rds On (Max) @ Id, Vgs | 6.8 mOhm |
| Supplier Device Package | IPAK |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 16 V |
| Vgs(th) (Max) @ Id | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 278 | $ 1.08 | |
| 278 | $ 1.08 | |||
Description
General part information
IRLU3636 Series
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Documents
Technical documentation and resources