IRLU3636 Series

Catalog

IR MOSFET™ N-CHANNEL MOSFET ; IPAK TO-251 PACKAGE; 6.8 MOHM;

Part	Package / Case	Vgs (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology
Infineon Technologies IRLU3636PBF	IPAK TO-251-3 Short Leads TO-251AA	16 V	6.8 mOhm	IPAK	60 V	49 nC	Through Hole	4.5 V 10 V	-55 °C	175 ░C	3779 pF	2.5 V	N-Channel	143 W	50 A	MOSFET (Metal Oxide)
Infineon Technologies IRLU3636PBF	IPAK TO-251-3 Short Leads TO-251AA	16 V	6.8 mOhm	IPAK	60 V	49 nC	Through Hole	4.5 V 10 V	-55 °C	175 ░C	3779 pF	2.5 V	N-Channel	143 W	50 A	MOSFET (Metal Oxide)