DMN33D8LTQ-7
ActiveDiodes Inc
TRANS MOSFET N-CH 30V 0.115A 3-PIN SOT-523 T/R
Deep-Dive with AI
Search across all available documentation for this part.
DocumentsDatasheet
DMN33D8LTQ-7
ActiveDiodes Inc
TRANS MOSFET N-CH 30V 0.115A 3-PIN SOT-523 T/R
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN33D8LTQ-7 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 115 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 0.55 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 48 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-523 |
| Power Dissipation (Max) | 240 mW |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 5 Ohm |
| Supplier Device Package | SOT-523 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 1.5 V |
DMN33D8LDWQ Series
Dual N-Channel Enhancement Mode MOSFET
| Part | Technology | Drain to Source Voltage (Vdss) | Qualification | Power Dissipation (Max) | Package / Case | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Grade | FET Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Configuration | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | MOSFET (Metal Oxide) | 30 V | AEC-Q101 | 240 mW | SOT-523 | 1.5 V | 5 Ohm | SOT-523 | Surface Mount | Automotive | N-Channel | 0.55 nC | -55 °C | 150 °C | 4 V | 2.5 V | 48 pF | 115 mA | 20 V | |||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | SOT-563 SOT-666 | 1.5 V | 2.4 Ohm | SOT-563 | Surface Mount | -55 °C | 150 °C | 48 pF | 350 mA | 1.23 nC | 2 N-Channel (Dual) | 430 mW | ||||||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | SOT-563 SOT-666 | 1.4 V | 2.4 Ohm | SOT-563 | Surface Mount | -55 °C | 150 °C | 48 pF | 350 mA | 1.23 nC | 2 N-Channel (Dual) | 430 mW | ||||||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | 6-TSSOP SC-88 SOT-363 | 1.5 V | 2.4 Ohm | SOT-363 | Surface Mount | -55 °C | 150 °C | 48 pF | 250 mA | 1.23 nC | 2 N-Channel (Dual) | 350 mW | ||||||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | 240 mW | SOT-523 | 1.5 V | 5 Ohm | SOT-523 | Surface Mount | N-Channel | 0.55 nC | -55 °C | 150 °C | 4 V | 2.5 V | 48 pF | 115 mA | 20 V | |||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | AEC-Q101 | 6-TSSOP SC-88 SOT-363 | 1.5 V | 2.4 Ohm | SOT-363 | Surface Mount | Automotive | -55 °C | 150 °C | 48 pF | 250 mA | 1.23 nC | 2 N-Channel (Dual) | 350 mW | ||||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | SOT-563 SOT-666 | 1.4 V | 2.4 Ohm | SOT-563 | Surface Mount | -55 °C | 150 °C | 48 pF | 350 mA | 1.23 nC | 2 N-Channel (Dual) | 430 mW | ||||||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | SOT-563 SOT-666 | 1.4 V | 2.4 Ohm | SOT-563 | Surface Mount | -55 °C | 150 °C | 48 pF | 350 mA | 1.23 nC | 2 N-Channel (Dual) | 430 mW | ||||||||
Diodes Inc | MOSFET (Metal Oxide) | 30 V | AEC-Q101 | 240 mW | SOT-523 | 1.5 V | 5 Ohm | SOT-523 | Surface Mount | Automotive | N-Channel | 0.55 nC | -55 °C | 150 °C | 4 V | 2.5 V | 48 pF | 115 mA | 20 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| 10 | $ 0.32 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.13 | |||
| 1000 | $ 0.10 | |||
| Digi-Reel® | 1 | $ 0.38 | ||
| 10 | $ 0.23 | |||
| 100 | $ 0.15 | |||
| 500 | $ 0.11 | |||
| 1000 | $ 0.10 | |||
| Tape & Reel (TR) | 3000 | $ 0.08 | ||
| 6000 | $ 0.08 | |||
| 9000 | $ 0.07 | |||
| 30000 | $ 0.07 | |||
| 75000 | $ 0.05 | |||
| 150000 | $ 0.05 | |||
Description
General part information
DMN33D8LDWQ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources