DMN33D9LV-7A
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
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DMN33D9LV-7A
ActiveDiodes Inc
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMN33D9LV-7A |
|---|---|
| Configuration | 2 N-Channel (Dual) |
| Current - Continuous Drain (Id) @ 25°C | 350 mA |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.23 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 48 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SOT-666, SOT-563 |
| Power - Max [Max] | 430 mW |
| Rds On (Max) @ Id, Vgs | 2.4 Ohm |
| Supplier Device Package | SOT-563 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.45 | |
| 10 | $ 0.32 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.14 | |||
| 1000 | $ 0.11 | |||
| Digi-Reel® | 1 | $ 0.45 | ||
| 10 | $ 0.32 | |||
| 100 | $ 0.16 | |||
| 500 | $ 0.14 | |||
| 1000 | $ 0.11 | |||
| Tape & Reel (TR) | 3000 | $ 0.10 | ||
| 6000 | $ 0.10 | |||
| 9000 | $ 0.09 | |||
| 30000 | $ 0.08 | |||
| 75000 | $ 0.07 | |||
Description
General part information
DMN33D8LDWQ Series
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Documents
Technical documentation and resources