Zenode.ai Logo
Beta
K
BSZ0994NSATMA1 - BSZ0994NSATMA1

BSZ0994NSATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 7 MOHM;

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet
BSZ0994NSATMA1 - BSZ0994NSATMA1

BSZ0994NSATMA1

Active
Infineon Technologies

OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 7 MOHM;

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBSZ0994NSATMA1
Current - Continuous Drain (Id) @ 25°C13 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs7 nC
Input Capacitance (Ciss) (Max) @ Vds890 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.1 W
Rds On (Max) @ Id, Vgs7 mOhm
Supplier Device PackagePG-TSDSON-8-25
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.34
10$ 0.84
100$ 0.56
500$ 0.44
1000$ 0.40
2000$ 0.36
Digi-Reel® 1$ 1.34
10$ 0.84
100$ 0.56
500$ 0.44
1000$ 0.40
2000$ 0.36
Tape & Reel (TR) 5000$ 0.31

Description

General part information

BSZ0994 Series

With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.

Documents

Technical documentation and resources