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OPTIMOS™ N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 FUSED LEAD PACKAGE; 7 MOHM;
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Type | Power Dissipation (Max) | Vgs (Max) | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | -55 °C | 150 °C | MOSFET (Metal Oxide) | 30 V | 4.5 V 10 V | 13 A | 7 nC | N-Channel | 2.1 W | 20 V | 8-PowerTDFN | 890 pF | 2 V | PG-TSDSON-8-25 | Surface Mount | 7 mOhm |