STGWT60V60DF

Obsolete

STMicroelectronics

TRANSISTOR: IGBT; 600V; 60A; 375W; TO3P

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Obsolete

STMicroelectronics

TRANSISTOR: IGBT; 600V; 60A; 375W; TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	STGWT60V60DF

Current - Collector (Ic) (Max) [Max]	80 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	334 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power - Max [Max]	375 W
Reverse Recovery Time (trr)	74 ns
Switching Energy	550 µJ, 750 µJ
Test Condition	60 A, 400 V, 4.7 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

Part	IGBT Type	Gate Charge	Td (on/off) @ 25°C	Voltage - Collector Emitter Breakdown (Max)	Vce(on) (Max) @ Vge, Ic	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]	Mounting Type	Switching Energy	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Test Condition	Power - Max [Max]	Reverse Recovery Time (trr)	Voltage - Collector Emitter Breakdown (Max) [Max]
STMicroelectronics STGWT60H65FB	Trench Field Stop	306 nC	51 ns 160 ns	650 V	2.3 V	240 A	80 A	Through Hole	1.09 mJ 626 µJ	TO-3P	-55 °C	175 ░C	SC-65-3 TO-3P-3	5 Ohm 15 V 60 A 400 V	375 W
STMicroelectronics STGWT60V60DF	Trench Field Stop	334 nC			2.3 V	240 A	80 A	Through Hole	550 µJ 750 µJ		-55 °C	175 ░C	SC-65-3 TO-3P-3	4.7 Ohm 15 V 60 A 400 V	375 W	74 ns	600 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 600 V 80 A 375 W Through Hole

Technical documentation and resources