STGWT60H65FB
ActiveTRANS IGBT CHIP N-CH 650V 80A 3-PIN TO-3P TUBE
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STGWT60H65FB
ActiveTRANS IGBT CHIP N-CH 650V 80A 3-PIN TO-3P TUBE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGWT60H65FB |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 80 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 306 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 375 W |
| Supplier Device Package | TO-3P |
| Switching Energy | 1.09 mJ, 626 µJ |
| Td (on/off) @ 25°C | 51 ns, 160 ns |
| Test Condition | 5 Ohm, 15 V, 60 A, 400 V |
| Vce(on) (Max) @ Vge, Ic | 2.3 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 30 | $ 3.26 | |
| 90 | $ 2.80 | |||
| 300 | $ 2.64 | |||
| 750 | $ 2.49 | |||
| 1500 | $ 2.13 | |||
| 3000 | $ 2.01 | |||
Description
General part information
STGWT60 Series
This device is an IGBT developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.Maximum junction temperature: TJ= 175 °CHigh speed switching seriesMinimized tail currentVCE(sat)= 1.6 V (typ.) @ IC= 60 ATight parameters distributionSafe parallelingLow thermal resistance
Documents
Technical documentation and resources