Specification	RJK03P7DPA-00#J5A

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Maximum)	30 A
Current - Continuous Drain (Id) (Typical)	15 A, 15 A, 15 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
FET Feature Drive Voltage	4.5 V
Gate Charge (Max)	7.1 nC
Input Capacitance (Ciss) (Max)	1190 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-WFDFN Exposed Pad
Package Name	8-WPAK
Power - Max (Value 1)	10 W
Power - Max (Value 2)	20 W
Rds On (Max)	9.4 mOhm
Technology	MOSFET (Metal Oxide)

RJK03P7DPA Series

Built In Sbd N Channel Power MOSFET

Part	Technology	Rds On (Max)	Mounting Type	Channel Count	Configuration - Features	Configuration	FET Feature	FET Feature Drive Voltage	Gate Charge (Max)	Power - Max (Value 1)	Power - Max (Value 2)	Package / Case	Operating Temperature	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	Package Name	Drain to Source Voltage (Vdss)
Renesas Electronics Corporation RJK03P7DPA-00#J5A	MOSFET (Metal Oxide)	9.4 mOhm	Surface Mount	2	Half Bridge	N-Channel	Logic Level Gate	4.5 V	7.1 nC	10 W	20 W	8-WFDFN Exposed Pad	150 °C	1190 pF	15 A 15 A 15 A	30 A	8-WPAK	30 V

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