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Built In Sbd N Channel Power MOSFET
Description
AI
The RJK03P7DPA is a Built In Sbd N Channel Power MOSFET.
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Built In Sbd N Channel Power MOSFET
Built In Sbd N Channel Power MOSFET
| Part | Technology | Rds On (Max) | Mounting Type | Channel Count | Configuration - Features | Configuration | FET Feature | FET Feature Drive Voltage | Gate Charge (Max) | Power - Max (Value 1) | Power - Max (Value 2) | Package / Case | Operating Temperature | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Typical) | Current - Continuous Drain (Id) (Maximum) | Package Name | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | MOSFET (Metal Oxide) | 9.4 mOhm | Surface Mount | 2 | Half Bridge | N-Channel | Logic Level Gate | 4.5 V | 7.1 nC | 10 W | 20 W | 8-WFDFN Exposed Pad | 150 °C | 1190 pF | 15 A 15 A 15 A | 30 A | 8-WPAK | 30 V |