IXFH10N100

Obsolete

IXYS

MOSFET N-CH 1KV 10A TO-247AD

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Obsolete

IXYS

MOSFET N-CH 1KV 10A TO-247AD

Technical Specifications

Parameters and characteristics for this part

Specification	IXFH10N100

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	1000 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	155 nC
Input Capacitance (Ciss) (Max) @ Vds	4000 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	300 W
Rds On (Max) @ Id, Vgs	1.2 Ohm
Supplier Device Package	TO-247AD (IXFH)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Supplier Device Package	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)
IXYS IXFH10N100Q	4.5 V	1.2 Ohm	155 nC	TO-247-3	4000 pF	MOSFET (Metal Oxide)	10 V	20 V	TO-247AD (IXFH)	N-Channel	-55 °C	150 °C	10 A	300 W	Through Hole	1000 V
IXYS IXFH10N100	4.5 V	1.2 Ohm	155 nC	TO-247-3	4000 pF	MOSFET (Metal Oxide)	10 V	20 V	TO-247AD (IXFH)	N-Channel	-55 °C	150 °C	10 A	300 W	Through Hole	1000 V
IXYS IXFH10N90	4.5 V	1.1 Ohm	155 nC	TO-247-3	4200 pF	MOSFET (Metal Oxide)	10 V	20 V	TO-247AD (IXFH)	N-Channel	-55 °C	150 °C	10 A	300 W	Through Hole	900 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 1000 V 10A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)

Technical documentation and resources

No documents available