MOSFET N-CH 1000V 10A TO247AD
| Part | Vgs(th) (Max) @ Id | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Technology | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | FET Type | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) [Max] | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
IXYS | 4.5 V | 1.2 Ohm | 155 nC | TO-247-3 | 4000 pF | MOSFET (Metal Oxide) | 10 V | 20 V | TO-247AD (IXFH) | N-Channel | -55 °C | 150 °C | 10 A | 300 W | Through Hole | 1000 V |
IXYS | 4.5 V | 1.2 Ohm | 155 nC | TO-247-3 | 4000 pF | MOSFET (Metal Oxide) | 10 V | 20 V | TO-247AD (IXFH) | N-Channel | -55 °C | 150 °C | 10 A | 300 W | Through Hole | 1000 V |
IXYS | 4.5 V | 1.1 Ohm | 155 nC | TO-247-3 | 4200 pF | MOSFET (Metal Oxide) | 10 V | 20 V | TO-247AD (IXFH) | N-Channel | -55 °C | 150 °C | 10 A | 300 W | Through Hole | 900 V |