IAUS165N08S5N029ATMA1
ActiveINFINEON’S IAUS165N08S5N029 N-CHANNEL MOSFET WITH ULTRA LOW RDS(ON), AEC QUALIFIED, ROHS COMPLIANT, 175°C OPERATING TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
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IAUS165N08S5N029ATMA1
ActiveINFINEON’S IAUS165N08S5N029 N-CHANNEL MOSFET WITH ULTRA LOW RDS(ON), AEC QUALIFIED, ROHS COMPLIANT, 175°C OPERATING TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IAUS165N08S5N029ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 165 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 90 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) @ Vds | 6370 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSMD, Gull Wing |
| Power Dissipation (Max) | 167 W |
| Qualification | AEC-Q101 |
| Rds On (Max) @ Id, Vgs | 2.9 mOhm |
| Supplier Device Package | PG-HSOG-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IAUS165 Series
• N-channel - Enhancement mode• AEC qualified• MSL1 up to 260°C peak reflow• 175°C operating temperature• Green product (RoHS compliant)• Ultra low Rds(on)• 100% Avalanche tested
Documents
Technical documentation and resources