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INFINEON’S IAUS165N08S5N029 N-CHANNEL MOSFET WITH ULTRA LOW RDS(ON), AEC QUALIFIED, ROHS COMPLIANT, 175°C OPERATING TEMP. FIND DATA SHEET, PARAMETERS AND ORDERING INFORMATION.
| Part | Power Dissipation (Max) | Drain to Source Voltage (Vdss) | Gate Charge (Qg) (Max) @ Vgs [Max] | Current - Continuous Drain (Id) @ 25°C | Qualification | Mounting Type | Rds On (Max) @ Id, Vgs | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Grade | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Vgs(th) (Max) @ Id | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 167 W | 80 V | 90 nC | 165 A | AEC-Q101 | Surface Mount | 2.9 mOhm | 20 V | 6 V 10 V | Automotive | PG-HSOG-8-1 | -55 °C | 175 ░C | N-Channel | 6370 pF | 8-PowerSMD Gull Wing | 3.8 V | MOSFET (Metal Oxide) |