IPP60R060P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 60 MOHM; PRICE/PERFORMANCE

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IPP60R060P7XKSA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 60 MOHM; PRICE/PERFORMANCE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R060P7XKSA1

Current - Continuous Drain (Id) @ 25°C	48 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds [Max]	2895 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	164 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP60R060 Series

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPP60R060C7XKSA1	PG-TO220-3	35 A	Through Hole	162 W	10 V	-55 °C	150 °C	N-Channel	4 V	60 mOhm	MOSFET (Metal Oxide)	2850 pF	TO-220-3	68 nC	20 V	600 V
Infineon Technologies IPP60R060P7XKSA1	PG-TO220-3	48 A	Through Hole	164 W	10 V	-55 °C	150 °C	N-Channel	4 V	60 mOhm	MOSFET (Metal Oxide)		TO-220-3		20 V	600 V	2895 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 6.22
		10	$ 4.18
		100	$ 3.03
		500	$ 2.54

Description

General part information

IPP60R060 Series

The600V CoolMOS™ P7is the successor to the600V CoolMOS™ P6series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the CoolMOS™ 7th generation platform ensure its high efficiency.

Documents

Technical documentation and resources

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