IPP60R060C7XKSA1

Active

Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 60 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsDatasheet

IPP60R060C7XKSA1

Active

Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 600 V ; TO-220 PACKAGE; 60 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IPP60R060C7XKSA1

Current - Continuous Drain (Id) @ 25°C	35 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	68 nC
Input Capacitance (Ciss) (Max) @ Vds	2850 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	162 W
Rds On (Max) @ Id, Vgs	60 mOhm
Supplier Device Package	PG-TO220-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

IPP60R060 Series

Part	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds [Max]
Infineon Technologies IPP60R060C7XKSA1	PG-TO220-3	35 A	Through Hole	162 W	10 V	-55 °C	150 °C	N-Channel	4 V	60 mOhm	MOSFET (Metal Oxide)	2850 pF	TO-220-3	68 nC	20 V	600 V
Infineon Technologies IPP60R060P7XKSA1	PG-TO220-3	48 A	Through Hole	164 W	10 V	-55 °C	150 °C	N-Channel	4 V	60 mOhm	MOSFET (Metal Oxide)		TO-220-3		20 V	600 V	2895 pF

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	1	$ 5.75
		10	$ 5.21
		50	$ 5.09
		100	$ 5.08
Digikey	Tube	1	$ 7.60
		10	$ 5.16
		100	$ 3.78
		500	$ 3.30
Newark	Each	1	$ 7.54
		10	$ 7.46
		25	$ 4.08
		50	$ 3.91
		100	$ 3.74
		250	$ 3.57
		500	$ 3.39

Description

General part information

IPP60R060 Series

The600V CoolMOS™C7 superjunction (SJ) MOSFETseries offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering an outstanding level of performance in PFC, TTF and other hard-switching topologies. The IPL60R185C7 is also a perfect match for high-power-density charger designs. Efficiency and TCO (total cost of ownership) applications such as hyperdata centers and high efficiency telecom rectifiers (>96%) benefit from the higher efficiency offered by CoolMOS™C7. Gains of 0.3% to 0.7% in PFC and 0.1% in LLC topologies can be achieved. In the case of a 2.5kW server PSU, for example, using 600V CoolMOS™C7 SJ MOSFETs in a TO-247 4pin package can result in energy cost reductions of ~10% for PSU energy loss.

Documents

Technical documentation and resources