STW26NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN A TO-247 PACKAGE

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DocumentsAN2842 AN2344 +18

STW26NM60N

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STMicroelectronics

N-CHANNEL 600 V, 0.135 OHM TYP., 20 A MDMESH II POWER MOSFET IN A TO-247 PACKAGE

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DocumentsAN2842 AN2344 +18

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STW26NM60N

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	60 nC
Input Capacitance (Ciss) (Max) @ Vds	1800 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max)	140 W
Rds On (Max) @ Id, Vgs	165 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

STW26NM60N Series

N-channel 600 V, 0.135 Ohm typ., 20 A MDmesh II Power MOSFET in a TO-247 package

Part	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id	Package / Case	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature
STMicroelectronics STW26N60M2	169 W	165 mOhm	10 V	25 V	N-Channel	4 V	TO-247-3	Through Hole	34 nC	-55 °C	150 °C	TO-247-3	600 V	MOSFET (Metal Oxide)	20 A	1360 pF
STMicroelectronics STW26NM60N	140 W	165 mOhm	10 V	30 V	N-Channel	4 V	TO-247-3	Through Hole				TO-247-3	600 V	MOSFET (Metal Oxide)	20 A	1800 pF	60 nC	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 7.21
		30	$ 5.75
		120	$ 5.15
		510	$ 4.54
		1020	$ 4.09
		2010	$ 3.83

Description

General part information

STW26NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STW26NM60N

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STW26NM60N

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Technical Specifications

STW26NM60N Series

Pricing

Description

STW26NM60N Series

Documents

AN2842

AN2344

TN1378

TN1225

TN1224

DS9926

UM1575

AN4250

AN4337

TN1156

Datasheet

Product Change Notice EN

Datasheet

STW26NM60N Series