Zenode.ai Logo
Beta
⌘K
Log InSign Up
STW26N60M2 - TO-247-3 HiP

STW26N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsAN4406+24
STW26N60M2 - TO-247-3 HiP

STW26N60M2

Active
STMicroelectronics

N-CHANNEL 600 V, 140 MOHM TYP., 20 A MDMESH M2 POWER MOSFET IN A TO-247 PACKAGE

Deep-Dive with AI

DocumentsAN4406+24

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW26N60M2
Current - Continuous Drain (Id) @ 25°C20 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
Input Capacitance (Ciss) (Max) @ Vds1360 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power Dissipation (Max)169 W
Rds On (Max) @ Id, Vgs165 mOhm
Supplier Device PackageTO-247-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 3.03
10$ 2.54
100$ 2.06
600$ 1.83
1200$ 1.57
2400$ 1.48
5400$ 1.42

Description

General part information

STW26NM60N Series

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.