HTNFET-T

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Honeywell Aerospace

MOSFET N-CH 55V 4POWER TAB

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Honeywell Aerospace

MOSFET N-CH 55V 4POWER TAB

Technical Specifications

Parameters and characteristics for this part

Specification	HTNFET-T

Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	290 pF
Mounting Type	Through Hole
Operating Temperature [Max]	225 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-SIP
Power Dissipation (Max)	50 W
Rds On (Max) @ Id, Vgs	400 mOhm
Supplier Device Package	4-Power Tab
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	10 V

MOSFET N-CH 55V 4POWER TAB

Part	Input Capacitance (Ciss) (Max) @ Vds [Max]	Package / Case	FET Type	Technology	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max) [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)
Honeywell Aerospace HTNFET-T	290 pF	4-SIP	N-Channel	MOSFET (Metal Oxide)	55 V	5 V	-55 °C	225 °C	10 V	Through Hole	4.3 nC	4-Power Tab	400 mOhm	50 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 55 V 50W (Tj) Through Hole 4-Power Tab

Technical documentation and resources