MOSFET N-CH 55V 4POWER TAB
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | FET Type | Technology | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) [Max] | Mounting Type | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Honeywell Aerospace HTNFET-T | 290 pF | 4-SIP | N-Channel | MOSFET (Metal Oxide) | 55 V | 5 V | -55 °C | 225 °C | 10 V | Through Hole | 4.3 nC | 4-Power Tab | 400 mOhm | 50 W |