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DMP1022UWS-13 - Package Image for V-DFN3020-8

DMP1022UWS-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP1022UWS-13 - Package Image for V-DFN3020-8

DMP1022UWS-13

Active
Diodes Inc

P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP1022UWS-13
Current - Continuous Drain (Id) @ 25°C7.2 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]30 nC
Input Capacitance (Ciss) (Max) @ Vds2847 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-VDFN
Power Dissipation (Max) [Max]900 mW
Rds On (Max) @ Id, Vgs18 mOhm
Supplier Device PackageV-DFN3020-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 10000$ 0.27

Description

General part information

DMP1022UFDEQ Series

NRND = Not Recommended for New Design