Catalog
NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
NRND = Not Recommended for New Design
| Part | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | FET Type | Rds On (Max) @ Id, Vgs | Package / Case | Technology | Power Dissipation (Max) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Grade | Qualification | Rds On (Max) @ Id, Vgs [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 1.2 V 4.5 V | Surface Mount | 660 mW | 2953 pF | 8 V | 800 mV | 42.6 nC | 9.1 A | 12 V | U-DFN2020-6 (Type E) | -55 °C | 150 °C | P-Channel | 16 mOhm | 6-PowerUDFN | MOSFET (Metal Oxide) | |||||
Diodes Inc | 1.8 V 4.5 V | Surface Mount | 2847 pF | 8 V | 1 V | 7.2 A | 12 V | V-DFN3020-8 | -55 °C | 150 °C | P-Channel | 18 mOhm | 8-VDFN | MOSFET (Metal Oxide) | 900 mW | 30 nC | |||||
Diodes Inc | 1.2 V 4.5 V | Surface Mount | 660 mW | 2953 pF | 8 V | 800 mV | 42.6 nC | 9.1 A | 12 V | U-DFN2020-6 (Type E) | -55 °C | 150 °C | P-Channel | 16 mOhm | 6-PowerUDFN | MOSFET (Metal Oxide) | Automotive | AEC-Q101 | |||
Diodes Inc | 1.2 V 4.5 V | Surface Mount | 730 mW | 2712 pF | 8 V | 800 mV | 48.3 nC | 9.5 A | 12 V | U-DFN2020-6 (Type F) | -55 °C | 150 °C | P-Channel | 6-UDFN Exposed Pad | MOSFET (Metal Oxide) | 14.8 mOhm | |||||
Diodes Inc | 1.8 V 4.5 V | Surface Mount | 2847 pF | 8 V | 1 V | 7.2 A | 12 V | V-DFN3020-8 | -55 °C | 150 °C | P-Channel | 18 mOhm | 8-VDFN | MOSFET (Metal Oxide) | 900 mW | 30 nC |