TK10J80E,S1E

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Toshiba Semiconductor and Storage

MOSFET N-CH 800V 10A TO3P

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Toshiba Semiconductor and Storage

MOSFET N-CH 800V 10A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TK10J80E,S1E

Current - Continuous Drain (Id) @ 25°C	10 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	46 nC
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Supplier Device Package	Technology	Package / Case	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Power Dissipation (Max) [Max]	Drain to Source Voltage (Vdss)	Operating Temperature
Toshiba Semiconductor and Storage TK10J80E,S1E	TO-3P(N)	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	N-Channel	Through Hole	10 V	1 Ohm	46 nC	10 A	30 V	250 W	800 V	150 °C

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General part information

N-Channel 800 V 10A (Ta) 250W (Tc) Through Hole TO-3P(N)

Technical documentation and resources