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MOSFET N-CH 800V 10A TO3P
| Part | Supplier Device Package | Technology | Package / Case | FET Type | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) | Power Dissipation (Max) [Max] | Drain to Source Voltage (Vdss) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-3P(N) | MOSFET (Metal Oxide) | SC-65-3 TO-3P-3 | N-Channel | Through Hole | 10 V | 1 Ohm | 46 nC | 10 A | 30 V | 250 W | 800 V | 150 °C |