DMN1019USN-7

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Diodes Inc

POWER MOSFET, N CHANNEL, 12 V, 9.3 A, 0.007 OHM, SC-59, SURFACE MOUNT

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Active

Diodes Inc

POWER MOSFET, N CHANNEL, 12 V, 9.3 A, 0.007 OHM, SC-59, SURFACE MOUNT

Technical Specifications

Parameters and characteristics for this part

Specification	DMN1019USN-7

Current - Continuous Drain (Id) @ 25°C	9.3 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	2.5 V, 1.2 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50.6 nC
Input Capacitance (Ciss) (Max) @ Vds	2426 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	680 mW
Rds On (Max) @ Id, Vgs	10 mOhm
Supplier Device Package	SC-59-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	800 mV

N-Channel MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Package / Case	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Diodes Inc DMN1019USN-7	2426 pF	-55 °C	150 °C	50.6 nC	680 mW	8 V	1.2 V 2.5 V	N-Channel	12 V	Surface Mount	SC-59-3	SC-59 SOT-23-3 TO-236-3	800 mV	MOSFET (Metal Oxide)	9.3 A	10 mOhm

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