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N-Channel MOSFET
| Part | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Drain to Source Voltage (Vdss) | Mounting Type | Supplier Device Package | Package / Case | Vgs(th) (Max) @ Id | Technology | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 2426 pF | -55 °C | 150 °C | 50.6 nC | 680 mW | 8 V | 1.2 V 2.5 V | N-Channel | 12 V | Surface Mount | SC-59-3 | SC-59 SOT-23-3 TO-236-3 | 800 mV | MOSFET (Metal Oxide) | 9.3 A | 10 mOhm |