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STTH8R03D - TO-220AC

STTH8R03D

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STMicroelectronics

DIODE GEN PURP 300V 8A TO220AC

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STTH8R03D - TO-220AC

STTH8R03D

Active
STMicroelectronics

DIODE GEN PURP 300V 8A TO220AC

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTTH8R03D
Current - Average Rectified (Io)8 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-2
Reverse Recovery Time (trr)30 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220AC
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]300 V
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

STTH8R06 Series

This device is an ultrafast diode based on 600 V Pt doping planar technology.

It can be used in hard switching conditions for power factor corrections. Its extremely low reverse recovery current reduces the switching power losses of the MOSFET and thus increases the overall application efficiency.

This diode is also intended for applications in power supplies and power conversions systems, and all sorts of power switching.

Documents

Technical documentation and resources