Technical Specifications
Parameters and characteristics for this part
| Specification | STTH8S06FP |
|---|---|
| Current - Average Rectified (Io) | 8 A |
| Current - Reverse Leakage @ Vr | 20 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | TO-220-2 Full Pack |
| Reverse Recovery Time (trr) | 18 ns |
| Speed | 200 mA, 500 ns |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 3.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 50 | $ 0.70 | |
| 100 | $ 0.56 | |||
| 250 | $ 0.55 | |||
| 500 | $ 0.47 | |||
| 1250 | $ 0.39 | |||
| 2500 | $ 0.36 | |||
| 5000 | $ 0.35 | |||
Description
General part information
STTH8R06 Series
This device is an ultrafast diode based on 600 V Pt doping planar technology.
It can be used in hard switching conditions for power factor corrections. Its extremely low reverse recovery current reduces the switching power losses of the MOSFET and thus increases the overall application efficiency.
This diode is also intended for applications in power supplies and power conversions systems, and all sorts of power switching.
Documents
Technical documentation and resources