AUIRS21811STR

Infineon Technologies

AUTOMOTIVE QUALIFIED HIGH AND LOW SIDE DRIVER, SOFTTURN-ON, NONINVERTING INPUTS, SEPARATE HIGH AND LOW SIDE INPUTS IN A 8-LEAD SOIC PACKAGE

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Infineon Technologies

AUTOMOTIVE QUALIFIED HIGH AND LOW SIDE DRIVER, SOFTTURN-ON, NONINVERTING INPUTS, SEPARATE HIGH AND LOW SIDE INPUTS IN A 8-LEAD SOIC PACKAGE

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRS21811STR

Channel Type	Independent
Current - Peak Output (Source, Sink) [custom]	2.3 A
Current - Peak Output (Source, Sink) [custom]	1.9 A
Driven Configuration	Half-Bridge
Gate Type	N-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]	600 V
Input Type	Non-Inverting
Logic Voltage - VIL, VIH	2.5 V, 0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rise / Fall Time (Typ) [custom]	60 ns
Rise / Fall Time (Typ) [custom]	35 ns
Supplier Device Package	8-SOIC
Voltage - Supply [Max]	20 V
Voltage - Supply [Min]	10 VDC

Part	Gate Type	Channel Type	Grade	Input Type	Logic Voltage - VIL, VIH	High Side Voltage - Max (Bootstrap) [Max]	Mounting Type	Number of Drivers	Operating Temperature [Max]	Operating Temperature [Min]	Driven Configuration	Voltage - Supply [Max]	Voltage - Supply [Min]	Supplier Device Package	Qualification	Current - Peak Output (Source, Sink) [custom]	Current - Peak Output (Source, Sink) [custom]	Package / Case	Package / Case [y]	Package / Case [x]	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]
Infineon Technologies AUIRS21811S	IGBT N-Channel MOSFET	Independent	Automotive	Non-Inverting	0.8 V 2.5 V	600 V	Surface Mount	2	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	8-SOIC	AEC-Q100	2.3 A	1.9 A	8-SOIC	3.9 mm	0.154 in	60 ns	35 ns
Infineon Technologies AUIRS2181STR	IGBT N-Channel MOSFET	Independent		Inverting	0.8 V 2.5 V	600 V	Surface Mount	2	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	8-SOIC		2.3 A	1.9 A	8-SOIC	3.9 mm	0.154 in	15 ns	15 ns
Infineon Technologies AUIRS21814STR	IGBT N-Channel MOSFET	Independent		Inverting	0.8 V 2.5 V	600 V	Surface Mount	2	150 °C	-40 °C	Half-Bridge	20 V	10 VDC			2.3 A	1.9 A	14-SOIC	3.9 mm	0.154 in	15 ns	15 ns
Infineon Technologies AUIRS21811STR	IGBT N-Channel MOSFET	Independent		Non-Inverting	0.8 V 2.5 V	600 V	Surface Mount	2	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	8-SOIC		2.3 A	1.9 A	8-SOIC	3.9 mm	0.154 in	60 ns	35 ns
Infineon Technologies AUIRS2181S	IGBT N-Channel MOSFET	Independent		Inverting	0.8 V 2.5 V	600 V	Surface Mount	2	150 °C	-40 °C	Half-Bridge	20 V	10 VDC	8-SOIC		2.3 A	1.9 A	8-SOIC	3.9 mm	0.154 in	15 ns	15 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Half-Bridge Gate Driver IC Non-Inverting 8-SOIC

Technical documentation and resources