IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Gate Type | Channel Type | Grade | Input Type | Logic Voltage - VIL, VIH | High Side Voltage - Max (Bootstrap) [Max] | Mounting Type | Number of Drivers | Operating Temperature [Max] | Operating Temperature [Min] | Driven Configuration | Voltage - Supply [Max] | Voltage - Supply [Min] | Supplier Device Package | Qualification | Current - Peak Output (Source, Sink) [custom] | Current - Peak Output (Source, Sink) [custom] | Package / Case | Package / Case [y] | Package / Case [x] | Rise / Fall Time (Typ) [custom] | Rise / Fall Time (Typ) [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | IGBT N-Channel MOSFET | Independent | Automotive | Non-Inverting | 0.8 V 2.5 V | 600 V | Surface Mount | 2 | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 8-SOIC | AEC-Q100 | 2.3 A | 1.9 A | 8-SOIC | 3.9 mm | 0.154 in | 60 ns | 35 ns |
Infineon Technologies | IGBT N-Channel MOSFET | Independent | Inverting | 0.8 V 2.5 V | 600 V | Surface Mount | 2 | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 8-SOIC | 2.3 A | 1.9 A | 8-SOIC | 3.9 mm | 0.154 in | 15 ns | 15 ns | ||
Infineon Technologies | IGBT N-Channel MOSFET | Independent | Inverting | 0.8 V 2.5 V | 600 V | Surface Mount | 2 | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 2.3 A | 1.9 A | 14-SOIC | 3.9 mm | 0.154 in | 15 ns | 15 ns | |||
Infineon Technologies | IGBT N-Channel MOSFET | Independent | Non-Inverting | 0.8 V 2.5 V | 600 V | Surface Mount | 2 | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 8-SOIC | 2.3 A | 1.9 A | 8-SOIC | 3.9 mm | 0.154 in | 60 ns | 35 ns | ||
Infineon Technologies | IGBT N-Channel MOSFET | Independent | Inverting | 0.8 V 2.5 V | 600 V | Surface Mount | 2 | 150 °C | -40 °C | Half-Bridge | 20 V | 10 VDC | 8-SOIC | 2.3 A | 1.9 A | 8-SOIC | 3.9 mm | 0.154 in | 15 ns | 15 ns |