STGYA50H120DF2
ActiveTRENCH GATE FIELD-STOP, 1200 V, 50 A, HIGH-SPEED H SERIES IGBT IN A MAX247 LONG LEADS PACKAGE
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STGYA50H120DF2
ActiveTRENCH GATE FIELD-STOP, 1200 V, 50 A, HIGH-SPEED H SERIES IGBT IN A MAX247 LONG LEADS PACKAGE
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Technical Specifications
Parameters and characteristics for this part
| Specification | STGYA50H120DF2 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 100 A |
| Current - Collector Pulsed (Icm) | 200 A |
| Gate Charge | 210 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-247-3 |
| Power - Max [Max] | 535 W |
| Reverse Recovery Time (trr) | 340 ns |
| Supplier Device Package | TO-247 |
| Switching Energy | 2 mJ, 2.1 mJ |
| Td (on/off) @ 25°C | 40 ns, 284 ns |
| Test Condition | 50 A, 10 Ohm, 15 V, 600 V |
| Vce(on) (Max) @ Vge, Ic | 2.6 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 1200 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGYA50H120DF2 Series
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources