STGYA50H120DF2 Series

Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package

Catalog

Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package

Part	Supplier Device Package	Switching Energy	Vce(on) (Max) @ Vge, Ic	Gate Charge	Power - Max [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Package / Case	IGBT Type	Test Condition	Reverse Recovery Time (trr)	Current - Collector Pulsed (Icm)	Current - Collector (Ic) (Max) [Max]
STMicroelectronics STGYA50M120DF3	MAX247™	2 mJ 3.2 mJ	2.2 V	194 nC	535 W	Through Hole	1200 V	-55 °C	175 ░C	38 ns	258 ns	TO-247-3	Trench Field Stop	10 Ohm 15 V 50 A 600 V	325 ns	200 A	100 A
STMicroelectronics STGYA50H120DF2	TO-247	2 mJ 2.1 mJ	2.6 V	210 nC	535 W	Through Hole	1200 V	-55 °C	175 ░C	40 ns 284 ns		TO-247-3	Trench Field Stop	10 Ohm 15 V 50 A 600 V	340 ns	200 A	100 A

Catalog

Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat)temperature coefficient and the tight parameter distribution result in safer paralleling operation.