Specification	CSD19503KCS

Current - Continuous Drain (Id) (Ta)	100 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	36 nC, 36 nC
Input Capacitance (Ciss) (Max)	2730 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	188 W
Rds On (Max)	9.2 mOhm, 9.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.4 V

CSD19503KCS Series

80-V, N channel NexFET™ power MOSFET, single TO-220, 9.2 mOhm

Part	Power Dissipation (Max)	Vgs(th) (Max)	Mounting Type	Technology	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case	FET Type	Package Name	Drain to Source Voltage (Vdss)	Gate Charge (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Input Capacitance (Ciss) (Max)	Vgs (Max)
Texas Instruments CSD19503KCS	188 W	3.4 V	Through Hole	MOSFET (Metal Oxide)	9.2 mOhm 9.2 mOhm	-55 °C	175 °C	100 A	TO-220-3	N-Channel	TO-220-3	80 V	36 nC 36 nC	6 V	10 V	2730 pF	20 V

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