SSM3J375F,LF

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 2A S-MINI

Technical Specifications

Parameters and characteristics for this part

Specification	SSM3J375F,LF

Current - Continuous Drain (Id) @ 25°C	2 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.6 nC
Input Capacitance (Ciss) (Max) @ Vds	270 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	600 mW
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	S-Mini
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	6 V
Vgs (Max) [Min]	-8 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Technology	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs (Max) [Max]	Vgs (Max) [Min]	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)
Toshiba Semiconductor and Storage SSM3J375F,LF	1 V	S-Mini	20 V	150 °C	SC-59 SOT-23-3 TO-236-3	2 A	270 pF	MOSFET (Metal Oxide)	P-Channel	Surface Mount	4.6 nC	600 mW	6 V	-8 V	150 mOhm	1.5 V 4.5 V

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General part information

P-Channel 20 V 2A (Ta) 600mW (Ta) Surface Mount S-Mini

Technical documentation and resources