MOSFET P-CH 20V 2A S-MINI
| Part | Vgs(th) (Max) @ Id | Supplier Device Package | Drain to Source Voltage (Vdss) | Operating Temperature | Package / Case | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) [Max] | Vgs (Max) [Max] | Vgs (Max) [Min] | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 1 V | S-Mini | 20 V | 150 °C | SC-59 SOT-23-3 TO-236-3 | 2 A | 270 pF | MOSFET (Metal Oxide) | P-Channel | Surface Mount | 4.6 nC | 600 mW | 6 V | -8 V | 150 mOhm | 1.5 V 4.5 V |