DMTH8008LPS-13

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Diodes Inc

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

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DMTH8008LPS-13

Active

Diodes Inc

80V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

DocumentsDatasheet Recommended Soldering Techniques +1

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMTH8008LPS-13

Current - Continuous Drain (Id) @ 25°C	91 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	41.2 nC
Input Capacitance (Ciss) (Max) @ Vds	2345 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	1.5 W, 100 W
Rds On (Max) @ Id, Vgs	7.8 mOhm
Supplier Device Package	PowerDI5060-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	2.8 V

DMTH8008LPS Series

80V 175°C N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Diodes Inc DMTH8008LPS-13	20 V	Surface Mount	1.5 W 100 W	91 A	2345 pF	N-Channel	2.8 V	8-PowerTDFN	MOSFET (Metal Oxide)	7.8 mOhm	4.5 V 10 V	PowerDI5060-8	41.2 nC	-55 °C	175 ░C	80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tape & Reel (TR)	2500	$ 0.39
		5000	$ 0.36
		7500	$ 0.34

Description

General part information

DMTH8008LPS Series

This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.