DMTH8008LPS Series

80V 175°C N-Channel Enhancement Mode MOSFET

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET

Part	Vgs (Max)	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Vgs(th) (Max) @ Id [Max]	Package / Case	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Diodes Inc DMTH8008LPS-13	20 V	Surface Mount	1.5 W 100 W	91 A	2345 pF	N-Channel	2.8 V	8-PowerTDFN	MOSFET (Metal Oxide)	7.8 mOhm	4.5 V 10 V	PowerDI5060-8	41.2 nC	-55 °C	175 ░C	80 V

Catalog

80V 175°C N-Channel Enhancement Mode MOSFET

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• High-Conversion Efficiency

• Low RDS(ON)– Minimizes On-State Losses

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• An automotive-compliant part is available under separate datasheet (DMTH8008LPSQ)

Description

This new generation MOSFET is designed to minimize RDS(ON)yet maintain superior switching performance. This device is ideal for use in power management and load switches.