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STB30NM60ND - D²PAK

STB30NM60ND

Obsolete
STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

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STB30NM60ND - D²PAK

STB30NM60ND

Obsolete
STMicroelectronics

MOSFET N-CH 600V 25A D2PAK

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSTB30NM60ND
Current - Continuous Drain (Id) @ 25°C25 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]2800 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]190 W
Rds On (Max) @ Id, Vgs [Max]130 mOhm
Supplier Device PackageD2PAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max) @ Id5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

STB30N Series

N-Channel 600 V 25A (Tc) 190W (Tc) Surface Mount D2PAK

Documents

Technical documentation and resources