MOSFET N-CH 500V 27A D2PAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Supplier Device Package | Power Dissipation (Max) [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] [custom] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics | 2740 pF | 27 A | 500 V | 4 V | 25 V | 115 mOhm | MOSFET (Metal Oxide) | D2PAK | 190 W | Surface Mount | 10 V | N-Channel | 94 nC | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | ||||
STMicroelectronics | 25 A | 600 V | 5 V | 25 V | MOSFET (Metal Oxide) | D2PAK | 190 W | Surface Mount | 10 V | N-Channel | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 100 nC | 130 mOhm | 2800 pF | ||||
STMicroelectronics | 2700 pF | 25 A | 600 V | 4 V | 30 V | MOSFET (Metal Oxide) | D2PAK | 190 W | Surface Mount | 10 V | N-Channel | 150 °C | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 130 mOhm | 91 nC |