SSM6N36FE,LM

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

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Toshiba Semiconductor and Storage

MOSFET 2N-CH 20V 0.5A ES6

Technical Specifications

Parameters and characteristics for this part

Specification	SSM6N36FE,LM

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	1.23 nC
Input Capacitance (Ciss) (Max) @ Vds	46 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-666, SOT-563
Rds On (Max) @ Id, Vgs	630 mOhm
Supplier Device Package	ES6
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	FET Feature	Package / Case	Vgs(th) (Max) @ Id	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage SSM6N36FE,LM	20 V	500 mA	MOSFET (Metal Oxide)	Logic Level Gate	SOT-563 SOT-666	1 V	ES6	Surface Mount	1.23 nC	150 °C	2 N-Channel (Dual)	46 pF	630 mOhm

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General part information

Mosfet Array 20V 500mA 150mW Surface Mount ES6

Technical documentation and resources