SSM6N36FE,LM
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-563(ES6)
SSM6N36FE,LM
ActiveToshiba Semiconductor and Storage
HIGH-SPEED, LOW-LOSS SOLUTIONS | TOSHIBA MOSFETS, N-CH X 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-563(ES6)
Description
General part information
SSM6N36FE Series
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch x 2 MOSFET, 20 V, 0.5 A, 0.66 Ω@4.5V, SOT-563(ES6)
Technical Specifications
Parameters and characteristics for this part
| Specification | SSM6N36FE,LM |
|---|---|
| Channel Count | 2 |
| Configuration | N-Channel |
| Configuration - Features | Dual |
| Current - Continuous Drain (Id) | 500 mA |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Max) | 1.23 nC |
| Input Capacitance (Ciss) (Max) | 46 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | SOT-563, SOT-666 |
| Package Name | ES6 |
| Power - Max | 150 mW |
| Rds On (Max) | 630 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) | 1 V |
Pricing
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CAD
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