MOSFET 2N-CH 20V 0.5A ES6
| Part | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | FET Feature | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Operating Temperature | Configuration | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 20 V | 500 mA | MOSFET (Metal Oxide) | Logic Level Gate | SOT-563 SOT-666 | 1 V | ES6 | Surface Mount | 1.23 nC | 150 °C | 2 N-Channel (Dual) | 46 pF | 630 mOhm |