DMP45H4D9HJ3
ActiveDiodes Inc
450V P-CHANNEL ENHANCEMENT MODE MOSFET
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DMP45H4D9HJ3
ActiveDiodes Inc
450V P-CHANNEL ENHANCEMENT MODE MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | DMP45H4D9HJ3 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 4.6 A |
| Drain to Source Voltage (Vdss) | 450 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 13.7 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 547 pF |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | IPAK, TO-251-3 Short Leads, TO-251AA |
| Power Dissipation (Max) | 104 W |
| Rds On (Max) @ Id, Vgs | 4.9 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 0.89 | |
| 75 | $ 0.73 | |||
| 150 | $ 0.53 | |||
| 525 | $ 0.44 | |||
| 1050 | $ 0.38 | |||
| 2025 | $ 0.34 | |||
| 5025 | $ 0.32 | |||
| 10050 | $ 0.30 | |||
Description
General part information
DMP45H4D9HJ3 Series
This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Documents
Technical documentation and resources