450V P-Channel Enhancement Mode MOSFET
450V P-Channel Enhancement Mode MOSFET
| Part | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Mounting Type | FET Type | Technology | Vgs (Max) | Rds On (Max) @ Id, Vgs | Package / Case | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | 450 V | 547 pF | 104 W | -55 °C | 150 °C | Through Hole | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.9 Ohm | IPAK TO-251-3 Short Leads TO-251AA | 4.6 A | 10 V | 5 V | 13.7 nC | ||
Diodes Inc | 450 V | 104 W | -55 °C | 150 °C | Surface Mount | P-Channel | MOSFET (Metal Oxide) | 30 V | 4.9 Ohm | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 4.7 A | 10 V | 5 V | 13.7 nC | 564 pF | TO-252 (DPAK) |